Title :
A 300 °C, 110-dB Sigma-Delta Modulator with Programmable Gain in Bulk CMOS
Author :
Yu, Xinyu ; Garverick, Steven L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH
Abstract :
A bulk CMOS, switched-capacitor 2nd-order sigma-delta modulator with pre-amplification uses correlated double sampling, constant-gm biasing, and a modulator architecture with coefficients adjusted to improve temperature stability. The stand-alone sigma-delta modulator has a peak SNR and SNDR ges 94 dB and 87 dB, respectively, for temperature from 25 degC to 300 degC with an oversampling ratio of 256. Including the preamplifier, the modulator dynamic range is ges 110 dB at temperatures up to 300 degC
Keywords :
CMOS integrated circuits; preamplifiers; sigma-delta modulation; switched capacitor networks; 25 to 300 C; 2nd-order sigma-delta modulator; bulk CMOS; constant-gm biasing; correlated double sampling; modulator architecture; preamplifier; programmable gain; switched-capacitor; temperature stability; Capacitors; Delta-sigma modulation; Dynamic range; MOSFETs; Modulation coding; Preamplifiers; Stability; Switching circuits; Temperature distribution; Temperature sensors;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320943
