• DocumentCode
    1677907
  • Title

    A 300 °C, 110-dB Sigma-Delta Modulator with Programmable Gain in Bulk CMOS

  • Author

    Yu, Xinyu ; Garverick, Steven L.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH
  • fYear
    2006
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    A bulk CMOS, switched-capacitor 2nd-order sigma-delta modulator with pre-amplification uses correlated double sampling, constant-gm biasing, and a modulator architecture with coefficients adjusted to improve temperature stability. The stand-alone sigma-delta modulator has a peak SNR and SNDR ges 94 dB and 87 dB, respectively, for temperature from 25 degC to 300 degC with an oversampling ratio of 256. Including the preamplifier, the modulator dynamic range is ges 110 dB at temperatures up to 300 degC
  • Keywords
    CMOS integrated circuits; preamplifiers; sigma-delta modulation; switched capacitor networks; 25 to 300 C; 2nd-order sigma-delta modulator; bulk CMOS; constant-gm biasing; correlated double sampling; modulator architecture; preamplifier; programmable gain; switched-capacitor; temperature stability; Capacitors; Delta-sigma modulation; Dynamic range; MOSFETs; Modulation coding; Preamplifiers; Stability; Switching circuits; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    1-4244-0075-9
  • Electronic_ISBN
    1-4244-0076-7
  • Type

    conf

  • DOI
    10.1109/CICC.2006.320943
  • Filename
    4114945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1677907