GaAs/GaAlAs power HBTs for mobile communications

Author

Wang, Huifang ; Pinatel, C. ; Tsouli, M. ; Plouchart, J.O. ; Konczykowska, A. ; Riet, M. ; Vuye, S. ; Berdaguer, P.

Author_Institution

Lab. de Bagneux, France Telecom, France

fYear

1993

Firstpage

549

Abstract

GaAlAs/GaAs power HBTs (heterojunction bipolar transistors) are investigated for handsets in mobile cellular communication systems at 1.8 GHz. Different HBT operating classes are compared, and the choice of the optimum operating class is discussed. Experimental measurements on a small-chip-size HBT of 0.4*0.4 mm/sup 2/ have shown 1-W output power with a power-added efficiency of 45%.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; mobile communication systems; power amplifiers; power transistors; solid-state microwave devices; telephone sets; 1 W; 1.8 GHz; 45 percent; GaAs-GaAlAs; HBT amplifier; HBT operating classes; TDM systems; handsets; heterojunction bipolar transistors; mobile cellular communication; output power; power HBTs; power-added efficiency; small-chip-size HBT; Distributed control; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Mobile communication; Power amplifiers; Power generation; Power measurement; Silicon; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276879

Filename

276879