Silicon MOSFETs, the microwave device technology for the 1990s

Silicon MOSFET technology using 1.5- mu m gate lengths has demonstrated excellent performance for 900-MHz applications. Circuit results for low-noise amplifiers, power amplifiers, mixers, and oscillators using this technology are discussed in comparison to other device technologies. Device results for 0.6- mu m-gate-length devices showing the microwave performance of silicon MOS transistors are discussed. These results, together with scaling predictions, indicate that microwave silicon MOSFETs will play a major role in the 1990s. The performance of devices with 0.6- mu m gate lengths indicates that silicon MOS will be the FET technology of choice for applications below 3 GHz. Advantages such as high voltage characteristics, low thermal conductivity of silicon, and the high operating junction temperature make silicon MOS a technology with immense potential for high-voltage X-band power applications.<>