Title :
A 0.6-watt U-band monolithic MESFET power amplifier
Author :
Ho, T. ; Pande, K. ; Phelleps, F. ; Singer, J. ; Rice, P. ; Adair, J. ; Ghahremani, M.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
A high-performance four-stage monolithic microwave integrated circuit (MMIC) power amplifier chip has been developed using 0.3- mu m gate-length and molecular beam epitaxial (MBE) MESFET technologies. These power MMIC chips have been combined to constitute a 47-GHz power amplifier with an output power of 0.45 W and an associated gain of 16.6 dB. A saturated output power of over 0.58 W was also achieved at 47 GHz. These results represent the highest reported power and gain at U-band from a MMIC amplifier using a 0.3- mu m gate-length MESFET. This amplifier has potential application as a driver for a monolithic doubler to obtain more than 80 mW of transmitted power at 94 GHz for W-band system applications.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; molecular beam epitaxial growth; power amplifiers; 0.3 micron; 0.46 W; 0.58 W; 16.6 dB; 47 GHz; MBE; MMIC; U-band monolithic MESFET power amplifier; driver; four-stage monolithic microwave integrated circuit; gate-length; monolithic doubler; output power; power amplifier chip; saturated output power; High power amplifiers; Integrated circuit technology; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Molecular beam epitaxial growth; Monolithic integrated circuits; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276883
