18-40 GHz semi-monolithic balanced cascade amplifiers using AlGaAs/InGaAs P-HEMT and GaAs MESFET

Author

Kimishima, M. ; Ashizuka, T.

Author_Institution

TOKIMEC Inc., Tokyo, Japan

fYear

1993

Firstpage

523

Abstract

18-40-GHz semimonolithic balanced cascade amplifiers have been developed by using AlGaAs/InGaAs pseudomorphic HEMTs (high electron mobility transistors) and GaAs MESFETs. The authors describe the design, fabrication, and performance of the modules and demonstrate the advantages of semimonolithic process technology for millimeter-wave applications. The P-HEMT amplifier is shown to exhibit a gain of 5.7+0.4 dB and a noise figure of less than 3.6 dB. The three-stage amplifier exhibits a gain of 15.6+0.8 dB, a noise figure of less than 4.2 dB, input/output return losses of better than 9.0 dB, and a 1-dB compressed power of greater than 11.0 dBm.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; cascade networks; differential amplifiers; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; 1-dB compressed power; 15.6 to 16.4 dB; 18 to 40 GHz; 3.6 dB; 4.2 dB; 5.7 to 6.1 dB; 9 dB; AlGaAs-InGaAs; GaAs; MESFETs; input/output return losses; millimeter-wave applications; modules; pseudomorphic HEMTs; semimonolithic balanced cascade amplifiers; three-stage amplifier; Fabrication; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; Millimeter wave technology; Noise figure; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276885

Filename

276885