Title :
Fast and accurate process-oriented model for CAD of MODFETs
Author :
Veresegyhazy, R.K. ; Snowden, C.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
A fast, quasi-two-dimensional physical MODFET (modulation-doped field-effect transistor) model, capable of accurately simulating single-channel, multichannel, and pseudomorphic MODFETs, has been developed. It has been used to predict DC small-signal and large-signal microwave performance, and it has been applied to microwave and millimeter-wave device and circuit CAD (computer-aided design). The highly efficient physical device model presented allows the DC small-signal and large-signal microwave characteristics of planar and recessed gate HEMTs (high electron mobility transistors) to be obtained based on device geometry and process data. It is easily applied to a wide variety of HEMT structures, including pHEMT, AlGaAs-GaAs, and multichannel structures. This model is particularly useful for optimizing HEMT designs and for use in nonlinear circuit design.<>
Keywords :
circuit CAD; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 2D physical model; AlGaAs-GaAs; DC small signal microwave performance; MODFETs; circuit CAD; computer-aided design; device geometry; high electron mobility transistors; large-signal microwave performance; millimeter-wave device; modulation-doped field-effect transistor; multichannel devices; multichannel structures; nonlinear circuit design; planar gate; process data; process-oriented model; pseudomorphic devices; recessed gate HEMTs; single channel devices; Circuit simulation; Computational modeling; Design automation; Epitaxial layers; FETs; HEMTs; MODFET circuits; Microwave circuits; Microwave devices; Millimeter wave devices;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276896
