Title :
Considerations for Accurate Behavioral Modeling of High-Speed SC ΣΔ Modulators
Author :
Suárez, George ; Jiménez, Manuel
Author_Institution :
Dept. of Electr. & Comput. Eng., Puerto Rico Univ., Mayaguez
Abstract :
The performance of ΣΔ modulators (ΣΔMs) is highly dependent of that of their embedded switched-capacitor (SC) network. Therefore, detailed transient models of SC integrators become necessary when modeling ΣΔMs. This work presents a behavioral transient model of a SC integrator that includes the effects of the amplifier transconductance and output conductance relation; and the dynamic capacitive loading effect on the settling time. Unlike traditional behavioral models where this level of detail is usually omitted, the proposed model provides a convenient tool to aid in the design of low-power high-speed SC ΣΔMs. Additional nonidealities such as jitter, thermal noise and DAC mismatch are included in a dual-band GSM/WCDMA second-order multi-bit with individual level averaging (ILA) ΣΔM VHDL-AMS model. Experimental data is used to validate the model where it exhibits less than 3.0% of error in the signal-to-noise plus distortion ratio (SNDR).
Keywords :
hardware description languages; integrating circuits; jitter; sigma-delta modulation; switched capacitor networks; thermal noise; transient analysis; DAC mismatch; GSM; SC integrators; VHDL-AMS model; WCDMA; amplifier transconductance effect; behavioral transient model; dynamic capacitive loading effect; embedded switched-capacitor network; high-speed SC SigmaDelta modulators; jitter characteristic; output conductance relation; second-order multibit with individual level averaging; signal-to-noise plus distortion ratio; thermal noise; Capacitors; Circuits; Computer networks; Frequency; GSM; Jitter; Multiaccess communication; Noise level; Parasitic capacitance; Transconductance;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320915
