Title :
Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
Author :
Meyaard, David S. ; Lin, Guan-Bo ; Shan, Qifeng ; Cho, Jaehee ; Schubert, E. Fred ; Shim, Hyun Wook ; Kim, Min-Ho ; Sone, Cheolsoo
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.
Keywords :
III-V semiconductors; carrier density; carrier mobility; gallium compounds; indium compounds; light emitting diodes; p-n junctions; wide band gap semiconductors; GaInN-GaN; carrier concentration; carrier mobility; carrier transport asymmetry; efficiency droop; light emitting diode; Current measurement; Electric fields; Gallium nitride; Light emitting diodes; Radiative recombination; Temperature; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
