Title :
A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC
Author :
Katz, R. ; Aust, M.V. ; Kasody, R. ; Wang, H. ; Allen, B. ; Dow, G.S. ; Tan, K. ; Lin, S. ; Myers, R.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A fully integrated MMIC (monolithic microwave integrated circuit) receiver was designed and fabricated using 0.2- mu m pseudomorphic InGaAs/GaAs HEMT (high electron mobility transistor) process technology. This MMIC receiver incorporates a single-stage RF amplifier, a two-stage balanced LO amplifier, a single-stage IF amplifier, an IF switch, and an image-reject diode mixer. Results for these receiver chips showed good conversion gain and image rejection in a single small chip over multioctave frequencies. This chip operates from a single +5 Vdc source and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; mixers (circuits); 0.2 micron; 280 mA; 5 V; HEMT; IF switch; InGaAs-GaAs; X-Ku band; conversion gain; image-reject diode mixer; image-reject receiver MMIC; multioctave frequencies; single-stage IF amplifier; single-stage RF amplifier; two-stage balanced LO amplifier; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency amplifiers; Switches; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276922
