Title :
High temperature design and testing of a DC-DC power converter with Si and SiC devices
Author :
Ray, Biswajit ; Spyker, Russell L.
Author_Institution :
Phys. & Eng. Technol., Bloomsburg Univ., PA, USA
Abstract :
Performance of a 2 kW, 40 kHz, 270 V/500 V boost dc-dc power converter as a function of temperature is reported for the following four power semiconductor device combinations: Si IGBT/Si diode, Si IGBT/SiC diode, Si MOSFET/Si diode, and Si MOSFET/SiC diode. The test results show the possibility of designing 200°C power converters with Si MOSFET, SiC Schottky, carefully selected soft-switching circuit topology, and devices with optimized packaging.
Keywords :
DC-DC power convertors; MOSFET; Schottky diodes; elemental semiconductors; insulated gate bipolar transistors; power semiconductor diodes; silicon compounds; wide band gap semiconductors; 2 kW; 200 C; 270 V; 40 kHz; 500 V; DC-DC power converter; Si; SiC; power semiconductor device; silicon IGBT; silicon MOSFET; silicon carbide Schottky; silicon carbide diode; silicon diode; soft-switching circuit topology; Circuit testing; DC-DC power converters; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power semiconductor devices; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature;
Conference_Titel :
Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE
Print_ISBN :
0-7803-8486-5
DOI :
10.1109/IAS.2004.1348574
