Title :
High-Temperature, High Reliability EEPROM Design For Automotive Applications
Author :
Walsh, J. ; Scott, G.
Author_Institution :
AMI Semicond., Pocatello, ID
Abstract :
An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping
Keywords :
EPROM; automotive electronics; high-temperature electronics; automotive applications; differential bit architecture; high reliability EEPROM; high-temperature EEPROM; temperature program voltage shaping; Ambient intelligence; Automotive applications; CMOS process; Circuits; EPROM; Logic design; Nonvolatile memory; Semiconductor device reliability; Temperature; Tunneling;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320818
