DocumentCode
1679403
Title
High-Temperature, High Reliability EEPROM Design For Automotive Applications
Author
Walsh, J. ; Scott, G.
Author_Institution
AMI Semicond., Pocatello, ID
fYear
2006
Firstpage
449
Lastpage
452
Abstract
An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping
Keywords
EPROM; automotive electronics; high-temperature electronics; automotive applications; differential bit architecture; high reliability EEPROM; high-temperature EEPROM; temperature program voltage shaping; Ambient intelligence; Automotive applications; CMOS process; Circuits; EPROM; Logic design; Nonvolatile memory; Semiconductor device reliability; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location
San Jose, CA
Print_ISBN
1-4244-0075-9
Electronic_ISBN
1-4244-0076-7
Type
conf
DOI
10.1109/CICC.2006.320818
Filename
4114999
Link To Document