Title :
1 MHz power factor correction boost converter with SiC Schottky diode
Author :
Jeannin, P-O. ; Frey, D. ; Podvin, J.-C. ; Ferrieux, J.-P. ; Barbaroux, J. ; Schanen, J.-L. ; Rivet, B.
Author_Institution :
Laboratoire d´´Electrotechnique de Grenoble, CNRS, Grenoble, France
Abstract :
This paper deals with the design of 1 MHz switching frequency boost convert with silicon carbide power Schottky diodes. This application is designed to work as a power factor correction rectifier. With high breakdown voltage, high energy gap and good thermal conductivity, silicon carbide (SiC) is a serious challenger as a new power semiconductor material. Here we analyze switching behavior in order to evaluate losses in such applications. Then, we compare theoretical and experimental results on PFC boost application.
Keywords :
Schottky diodes; power factor correction; power semiconductor diodes; rectifiers; silicon compounds; switching convertors; wide band gap semiconductors; 1 MHz; SiC; power factor correction rectifier; power semiconductor material; silicon carbide power Schottky diodes; switching frequency boost convert; thermal conductivity; Electromagnetic interference; MOSFET circuits; Power factor correction; Rectifiers; Schottky diodes; Semiconductor materials; Silicon carbide; Switching frequency; Thermal conductivity; Voltage;
Conference_Titel :
Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE
Print_ISBN :
0-7803-8486-5
DOI :
10.1109/IAS.2004.1348575
