• DocumentCode
    1679575
  • Title

    A 3.5 GS/s 5-b Flash ADC in 90 nm CMOS

  • Author

    Park, Sunghyun ; Palaskas, Yorgos ; Ravi, Ashoke ; Bishop, Ralph E. ; Flynn, Michael P.

  • Author_Institution
    Michigan Univ., Ann Arbor, MI
  • fYear
    2006
  • Firstpage
    489
  • Lastpage
    492
  • Abstract
    A 5-bit flash ADC incorporates 20 mum by 20 mum inductors to improve both comparator preamplification bandwidth and regeneration speed. A switched-cascode scheme reduces comparator kickback. Offset cancellation is achieved by modifying the comparator reference voltages without degrading high-speed performance. The ADC achieves a measured SNDR of 27.5 dB for a 5 MHz input at 4 GS/s, and 23.6 dB for a 1 GHz input at 3.5 GS/s. The power consumption (including clock buffer and ladder) is 227 mW at 3.5 GS/s. The active area is 0.658 mm2
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; comparators (circuits); 227 mW; 35 GHz; 5 bit; 7 GHz; 90 nm; CMOS technology; analog-digital convertors; comparator kickback; comparator preamplification bandwidth; offset cancellation; Bandwidth; Circuits; Clocks; Inductance; Inductors; Parasitic capacitance; Sampling methods; Switches; USA Councils; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    1-4244-0075-9
  • Electronic_ISBN
    1-4244-0076-7
  • Type

    conf

  • DOI
    10.1109/CICC.2006.320890
  • Filename
    4115007