DocumentCode :
1679648
Title :
GaAs FET direct frequency-modulators for 42-GHz-band HDTV radio cameras and 7-GHz-band field pick-up transmitters
Author :
Mitsumoto, H. ; Imai, K.
Author_Institution :
NHK, Tokyo, Japan
fYear :
1993
Firstpage :
663
Abstract :
The design of a direct frequency-modulator with high modulation sensitivity is described. With a dielectric resonator, two hyper-abrupt-junction varactors, and a GaAs FET, this design achieves a modulation sensitivity greater than 20 MHz/V in a 42-GHz-band frequency modulator developed for HDTV (high-definition television) radio cameras. When this design is used in a 7-GHz-band frequency modulator for a field pick-up transmitter gathering emergency news, it provides an output power of 22 dBm, a differential gain of less than 3%, and a differential phase of less than 2 degrees . All transmitters using this frequency modulator have a high broadcast efficiency.<>
Keywords :
III-V semiconductors; colour television cameras; frequency modulation; gallium arsenide; high definition television; modulators; solid-state microwave circuits; television transmitters; 42 GHz; 7 GHz; FET direct frequency-modulators; GaAs; HDTV radio cameras; dielectric resonator; field pick-up transmitters; high modulation sensitivity; high-definition television; hyper-abrupt-junction varactors; Cameras; Dielectrics; FETs; Frequency modulation; Gallium arsenide; HDTV; Phase modulation; Radio transmitters; TV; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1209-0
Type :
conf
DOI :
10.1109/MWSYM.1993.276994
Filename :
276994
Link To Document :
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