Title :
LDO Linear Regulator with Super-source Follower
Author :
Yi-Tsung Chang ; Fu-Lian Hung ; Ren-Hao Xue ; Yu-Da Shiau ; Po-Yu Cheng
Author_Institution :
Dept. of Electr. Eng., Univ. of Nat. Sun Yat-Sen, Kaohsiung, Taiwan
Abstract :
A low dropout regulator with super-source follower is exhibited and a single-transistor-control low dropout based the flipped voltage follower is discussed in this paper. The buffered flipped voltage follower with super-source follower is proposed to lower its output impedance so that the impedance at the gate of the pass device can be reduced and the pole at the gate is pushed to higher frequency as well as. The proposed low dropout with super-source follower is designed and simulated in TSMC 0.18 μm CMOS technology process. The layout design area is 565μm x 508μm. It can be obtained that when power supply voltage Vdd is 3.3 V, the circuit can provide the output voltage of 1.999 V and the power consumption of 15.94 mW with a variation of 4 mV in a load current range from 2 mA to 100 mA.
Keywords :
CMOS integrated circuits; operational amplifiers; voltage regulators; LDO linear regulator; TSMC CMOS technology process; buffered flipped voltage follower; current 2 mA to 100 mA; low dropout regulator; pass device; power 15.94 mW; single-transistor-control low dropout; size 0.18 mum; super-source follower; voltage 1.999 V; voltage 3.3 V; CMOS integrated circuits; Impedance; Logic gates; Regulators; Resistance; Transistors; Voltage control; Low dropout voltage; single transistor-control; super-source follower; voltage regulators;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
DOI :
10.1109/IS3C.2014.122