DocumentCode :
1680353
Title :
Time domain analysis of via holes and shorting pins in microstrip using 3-D SCN TLM
Author :
Eswarappa, C. ; Hoefer, W.J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fYear :
1993
Firstpage :
917
Abstract :
The scattering parameters of microstrip via holes and shorting pins are computed using the 3-D SCN (symmetrical condensed node) TLM (transmission line matrix) method. The results agree well with the available data at low frequencies, thus demonstrating that the TLM method is a powerful tool applicable in the analysis of monolithic microwave integrated circuits of high-density and high-speed digital microwave circuits.<>
Keywords :
MMIC; S-parameters; digital integrated circuits; microstrip components; time-domain analysis; transmission line theory; 3D TLM; digital microwave circuits; high-speed; microstrip; monolithic microwave integrated circuits; scattering parameters; shorting pins; symmetrical condensed node; transmission line matrix; via holes; Distributed parameter circuits; Frequency; Microstrip; Microwave theory and techniques; Pins; Power transmission lines; Scattering parameters; Symmetric matrices; Time domain analysis; Transmission line matrix methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1209-0
Type :
conf
DOI :
10.1109/MWSYM.1993.277036
Filename :
277036
Link To Document :
بازگشت