Title :
Stability and Reliability for Zinc-Oxide Thin-Film Transistors by O2 Plasma Treatment
Author :
Hsin Chiang You ; Chao Yuan Huang ; Ya Ling Wu
Author_Institution :
Dept. of Electron. Eng., Nat. Chin-Yi Univ. of Technol., Taichung, Taiwan
Abstract :
This work reports a simple and efficient route for the deposition of highly ordered and aligned ZnO film (~ 15-20 nm thick) as the semi conducting channel layer for transparent thin-film transistor (TFT) applications on silicon as well as on flexible polyimide (PI) substrate. The effect of oxygen (O2) plasma power of 18 W followed by low temperature (~300 °C) annealing at hot plate was studied to enhance the properties of ZnO-TFTs in terms of on/off current ratio and sustainability. ZnO based TFTs on silicon showed on/off current ratio of 106 without O2 plasma and 107 with O2 plasma. Then placed the TFT devices one year long to measure reliability, show on/off current ratio of 103 without O2 plasma and 107 with O2 plasma. The process is a promising method for fabricating high-perform ZnO-TFTs on plastic substrate could open up the way to be used the process in future.
Keywords :
II-VI semiconductors; annealing; low-temperature techniques; plasma deposition; semiconductor device reliability; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; O2 plasma treatment; PI; Si; TFT devices; ZnO; flexible polyimide substrate; hot plate; low temperature annealing; plastic substrate; power 18 W; reliability; semiconducting channel layer; stability; transparent thin-film transistor; zinc-oxide thin-film transistors; Fabrication; Plasma temperature; Silicon; Substrates; Thin film transistors; Zinc oxide; Oxygen-plasma; Zinc oxide; channel layer; flexible; thin film transistors;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
DOI :
10.1109/IS3C.2014.127
