HfO2 Trap Layer Nonvolatile Flash Memory on SiGe Channel

Author

Yu-Hsein Lin ; Jyun-Han Li ; Hsin-Chiang You ; Jin-Shi Hong ; Wan-Ting Tsai ; Hung-Wei Chen

Author_Institution

Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan

fYear

2014

fDate

10-12 June 2014

Firstpage

466

Lastpage

469

Abstract

This paper study a novel nonvolatile memory by using HfO₂ trapping layer on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller band gap than that of silicon, it can increases the electron/hole injection and enhances the program/erase speed. This study compares the characteristics of HfO₂ memories with different tunnel oxynitride thicknesses on epi-SiGe substrate. The results show that the nonvolatile memory has superior characteristics in terms of considerably large memory window, high speed program/erase, long retention time, good endurance for future low power applications.

Keywords

flash memories; random-access storage; HfO₂; band gap; electron/hole injection; low power applications; memory window; program/erase speed; trap layer nonvolatile flash memory; trapping layer; tunnel oxynitride thicknesses; Charge carrier processes; Flash memories; Hafnium compounds; Logic gates; Nonvolatile memory; Programming; Silicon germanium; Flash memory; Hafnium oxide; Nonvolatile memories; SiGe channel; Trapping Layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2014 International Symposium on

Conference_Location

Taichung

Type

conf

DOI

10.1109/IS3C.2014.128

Filename

6845920