Title :
Forming-Free ZrOx-Based Electrochemical Metallization ReRAM by Sol-Gel Technique
Author :
Fun-Tat Chin ; Yu-Hsien Lin ; Yu-Ping Hsiao ; Wen-Luh Yang
Author_Institution :
Electr. & Commun. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
In this work, the sol-gel derived ZrOx thin film as switching layer is proposed for Cu/ZrOx/TaN ReRAM device application. The resistive switching behavior is suggested to the formation and rupture Cu conductive filaments. The device shows the good electrical properties including forming free, low switching voltages (set/reset), high on/off ratio, better uniformity of Set/Reset and HRS/LRS distributions, and good stability data retention characteristics. Beside, the good switching property is due to the porous structure of sol-gel derived ZrOx thin film leading Cu ion fast migration into switching layer.
Keywords :
copper; integrated circuit metallisation; random-access storage; sol-gel processing; tantalum compounds; thin film devices; zirconium compounds; Cu-ZrOx-TaN; HRS-LRS distributions; conductive filaments; data retention characteristics; electrical properties; forming-free-based electrochemical metallization ReRAM; high on-off ratio; low switching voltages; porous structure; resistive random access memory device application; resistive switching behavior; set-reset distributions; sol-gel technique; switching layer; thin film; Electrodes; Electron devices; Ions; Metals; Nonvolatile memory; Resistance; Switches; Resistive Random Access Memory (ReRAM); Sol-gel technique; ZrOx switching layer;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
DOI :
10.1109/IS3C.2014.130
