Title :
11 GHz bandwidth GaAs MESFET/MSM OEIC receivers
Author :
Wang, J.S. ; Shih, C.G. ; Chang, W.H. ; Middleton, J. ; Apostolakis, P.J. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The authors report state-of-the-art performance of a direct ion implanted GaAs MESFET with a 0.6- mu m gate length and an MSM (metal-semiconductor-metal)-based OEIC (optoelectronic integrated circuit) receiver achieving a -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Omega , and the effective transimpedance is 565 Omega into a 50- Omega load. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz- Omega for this receiver.<>
Keywords :
Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; 0.6 micron; 1 kohm; 11 GHz; 850 nm; GaAs; direct ion implanted; effective transimpedance; feedback resistance; optical signals; transimpedance-bandwidth product; Bandwidth; Capacitance; Gallium arsenide; High speed optical techniques; MESFETs; Optical feedback; Optical receivers; Optoelectronic devices; Particle beam optics; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277045
