Title :
A 104dB SNDR Transimpedance-based CMOS ASIC for Tuning Fork Microgyroscopes
Author :
Sharma, Ajit ; Zaman, M. Faisal ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
A CMOS ASIC has been designed and interfaced with a high Q MEMS gyroscope to yield an angular rate sensor with a 1.2deg/hr noise floor and 2mV/deg/s rate sensitivity. A T-network transimpedance amplifier (TIA) has been implemented with a measured capacitive resolution of 0.04aF/radicHz, an SNDR of 104dB and which consumes ~ 400muW of power. The TIA also provides large on-chip transimpedance and can sustain oscillations in MEMS gyroscopes with motional impedances greater than 100MOmega
Keywords :
CMOS analogue integrated circuits; application specific integrated circuits; gyroscopes; micromechanical devices; operational amplifiers; vibrations; 400 muW; CMOS ASIC; T-network transimpedance amplifier; angular rate sensor; high Q MEMS gyroscope; tuning fork microgyroscopes; Acceleration; Application specific integrated circuits; Circuit topology; Costs; Electrodes; Gyroscopes; Impedance; Micromechanical devices; Power measurement; Vibrations;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320866
