Title :
Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation
Author :
Maricot, S. ; Vilcot, J.P. ; Decoster, D. ; Renaud, J.C. ; Rondi, D. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B.
Author_Institution :
Dept. Hyperfrequences at Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve d´Ascq, France
Abstract :
The monolithic integration of optoelectronic devices with microwave impedance matching networks is presented. These are a GaInAs photodiodes and a GaInAsP buried ridge stripe structure laser emitting at 1.3 mu m; both are fabricated on semi-insulating InP substrate. The matching networks, consisting of reactive components, have been designed to match these devices to 50 Omega at 6 GHz with a bandwidth close to 10%. Compared to an unmatched link, an improvement of 12 dB at 6 GHz is theoretically obtained; experimentally, it has been measured to 11.4 dB at 5.6 GHz.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; photodiodes; semiconductor lasers; 1.3 micron; 6 GHz; GaInAs-InP; GaInAsP-InP; InP; buried ridge stripe structure laser; microwave impedance matching networks; optoelectronic transceivers; photodiodes; reactive components; Diode lasers; Equivalent circuits; Impedance matching; Indium phosphide; Microwave devices; Monolithic integrated circuits; Optoelectronic devices; Photodiodes; Substrates; Transceivers;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277050
