Reactively matched optoelectronic transceivers on InP substrate for 6 GHz operation

Author

Maricot, S. ; Vilcot, J.P. ; Decoster, D. ; Renaud, J.C. ; Rondi, D. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B.

Author_Institution

Dept. Hyperfrequences at Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve d´Ascq, France

fYear

1993

Firstpage

1067

Abstract

The monolithic integration of optoelectronic devices with microwave impedance matching networks is presented. These are a GaInAs photodiodes and a GaInAsP buried ridge stripe structure laser emitting at 1.3 mu m; both are fabricated on semi-insulating InP substrate. The matching networks, consisting of reactive components, have been designed to match these devices to 50 Omega at 6 GHz with a bandwidth close to 10%. Compared to an unmatched link, an improvement of 12 dB at 6 GHz is theoretically obtained; experimentally, it has been measured to 11.4 dB at 5.6 GHz.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; photodiodes; semiconductor lasers; 1.3 micron; 6 GHz; GaInAs-InP; GaInAsP-InP; InP; buried ridge stripe structure laser; microwave impedance matching networks; optoelectronic transceivers; photodiodes; reactive components; Diode lasers; Equivalent circuits; Impedance matching; Indium phosphide; Microwave devices; Monolithic integrated circuits; Optoelectronic devices; Photodiodes; Substrates; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.277050

Filename

277050