Title :
Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges
Author :
Decoutere, S. ; Wambacq, P. ; Subramanian, V. ; Borremans, J. ; Mercha, A.
Author_Institution :
IMEC, Leuven
Abstract :
The new process module and device architecture options emerging for (sub-) 45nm CMOS, lead to both opportunities and challenges for analog/RF circuit design. These will be discussed both at the device level and circuit level for two competing architectures (planar bulk CMOS versus FinFETs), for different gate stacks and mobility enhancement techniques. Very high cutoff frequencies will be demonstrated for planar bulk CMOS devices, while FinFETs exhibit high voltage gain and excellent matching performance. As a result, FinFETs will be shown to be better suited for analog baseband design and to have acceptable RF performance in the 1-10 GHz range, while planar bulk CMOS outperforms the FinFETs for sub-circuits above 10 GHz
Keywords :
CMOS analogue integrated circuits; MOSFET; radiofrequency integrated circuits; 1 to 10 GHz; FinFET; analog baseband design; analog/RF CMOS circuit design; gate stacks; mobility enhancement techniques; planar bulk CMOS; process module; Baseband; CMOS analog integrated circuits; CMOS process; CMOS technology; Circuit synthesis; Cutoff frequency; FinFETs; Performance gain; Radio frequency; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320879
