Title :
SiGe BiCMOS Trends - Today and Tomorrow
Author :
Dunn, J. ; Harame, D.L. ; Joseph, A.J. ; Onge, S. A St ; Feilchenfeld, N.B. ; Lanzerotti, L. ; Orner, B. ; Gebreselasie, E. ; Johnson, J.B. ; Coolbaugh, D.D. ; Rassel, R. ; Khater, M.
Author_Institution :
IBM, Semicond. Res. & Dev. Center, Essex Junction, VT
Abstract :
High performance communications applications have made technology choices more important than ever. Silicon germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market. BiCMOS integration approaches for high performance and cost performance NPN modules and state of the art passive elements are discussed as well as future technology directions
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; BiCMOS trends; NPN modules; RFCMOS; SiGe; high performance communications; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Noise figure; Radio frequency; Silicon germanium; Wireless LAN;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320882
