Title :
Influence of Working Pressure on Structural and Optoelectronic Properties of Al-Doped ZnO Thin Films
Author :
Chien Hsun Chu ; Hung Wei Wu ; Jow Lay Huang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this study, we investigated the electrical, optical and structural properties of aluminum-doped ZnO (AZO) thin films by RF magnetron sputtering under different working pressure of 5 - 40 mTorr. Optimization of the prepared thin films shows low resistivity of 6.11 × 10-4 Ω-cm, mobility of 4.295 cm2/V-s and carrier concentration of 3.277 × 1020 cm-3 at working pressure of 5 mTorr. The maximum transmittance of 98.99 % for wavelengths above 600 nm and Haacke figure of merit (FOM) are 6.44 × 10-3 Ω-1 with working pressure of 5 mTorr. These results indicate that AZO thin films are a promising high conductivity transparent electrode scheme for solar cells and various displays applications.
Keywords :
II-VI semiconductors; aluminium; carrier density; semiconductor doping; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; AZO thin films; Al; Haacke figure of merit; RF magnetron sputtering; ZnO; carrier concentration; electrical properties; high conductivity transparent electrode scheme; optical properties; optoelectronic properties; solar cells; structural properties; working pressure; Conductivity; Magnetic films; Optical films; Photonic band gap; Sputtering; Zinc oxide; AZO; Aluminum-doped zinc oxide; RF magnetron sputtering; thin film; transparent conductive oxides;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
DOI :
10.1109/IS3C.2014.155
