DocumentCode :
168096
Title :
InP Schottky Barrier MOSFET with TiO2/Al2O3 as Gate Oxide
Author :
Ming-Kwei Lee ; Chih-Feng Yen
Author_Institution :
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chungli, Taiwan
fYear :
2014
fDate :
10-12 June 2014
Firstpage :
573
Lastpage :
576
Abstract :
The characteristics of Al/InP Schottky diode without and with (NH4)2S treatment (Al/S-InP) and corresponding MOSFET with atomic layer deposited TiO2/Al2O3 stacked gate oxides were investigated. The Schottky barrier height (φBp) of Al/InP with (NH4)2S treatment is improved from the removal of native oxides. For Al/S-InP Schottky barrier MOSFET with TiO2/Al2O3 gate oxides, good drain current-voltage and sub-threshold characteristics were obtained. The channel mobility and Tran conductance can reach 202 mm2/Vs and 4.45 × 10-7 S/μm at VDS = 1 V.
Keywords :
III-V semiconductors; MOSFET; Schottky barriers; alumina; atomic layer deposition; indium compounds; titanium compounds; InP; NH4)2S treatment; Schottky barrier MOSFET; Schottky barrier height; TiO2-Al2O3; atomic layer deposition; channel mobility; drain current-voltage characteristics; native oxide removal; stacked gate oxides; sub-threshold characteristics; transconductance; voltage 1 V; Aluminum oxide; Atomic layer deposition; Indium phosphide; Leakage currents; Logic gates; MOSFET; Schottky barriers; ALD; Al2O3; InP; MOSFET; Schottky barrier; TiO2;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
Type :
conf
DOI :
10.1109/IS3C.2014.156
Filename :
6845948
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=168096
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