InP Schottky Barrier MOSFET with TiO2/Al2O3 as Gate Oxide

Author

Ming-Kwei Lee ; Chih-Feng Yen

Author_Institution

Dept. of Electron. Eng., Chung Yuan Christian Univ., Chungli, Taiwan

fYear

2014

fDate

10-12 June 2014

Firstpage

573

Lastpage

576

Abstract

The characteristics of Al/InP Schottky diode without and with (NH₄)₂S treatment (Al/S-InP) and corresponding MOSFET with atomic layer deposited TiO₂/Al₂O₃ stacked gate oxides were investigated. The Schottky barrier height (φ_Bp) of Al/InP with (NH₄)₂S treatment is improved from the removal of native oxides. For Al/S-InP Schottky barrier MOSFET with TiO₂/Al₂O₃ gate oxides, good drain current-voltage and sub-threshold characteristics were obtained. The channel mobility and Tran conductance can reach 202 mm²/Vs and 4.45 × 10^-7 S/μm at V_DS = 1 V.

Keywords

III-V semiconductors; MOSFET; Schottky barriers; alumina; atomic layer deposition; indium compounds; titanium compounds; InP; NH₄)₂S treatment; Schottky barrier MOSFET; Schottky barrier height; TiO₂-Al₂O₃; atomic layer deposition; channel mobility; drain current-voltage characteristics; native oxide removal; stacked gate oxides; sub-threshold characteristics; transconductance; voltage 1 V; Aluminum oxide; Atomic layer deposition; Indium phosphide; Leakage currents; Logic gates; MOSFET; Schottky barriers; ALD; Al2O3; InP; MOSFET; Schottky barrier; TiO2;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2014 International Symposium on

Conference_Location

Taichung

Type

conf

DOI

10.1109/IS3C.2014.156

Filename

6845948