Title :
A Novel Monitoring Method of RF Characteristics Variations for Sub-0.1μm MOSFETs with Precise Gate-resistance Model
Author :
Tanabe, Akira ; Hijioka, Ken´ichiro ; Hayashi, Yoshihiro
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Kanagawa
Abstract :
RF characteristics for sub-0.1μm MOSFETs such as fT, fmax and their variations are estimated from the DC and capacitance parameters. A new RF gate resistance model with a silicide-polysilicon interface resistance is a key factor to estimate the RF characteristics precisely. The variations of RF characteristics are also inferred from correlation coefficient between the RF parameters and the DC and capacitance parameters. This method is effective in monitoring RF characteristics and their variations for scaled-down, RF/mixed-signal circuits at the chip fabrication.
Keywords :
MOSFET; electric resistance; mixed analogue-digital integrated circuits; MOSFET; RF characteristics variations; RF gate resistance model; RF/mixed-signal circuits; chip fabrication; monitoring RF characteristics; precise gate-resistance model; semiconductor interface resistance; Capacitance; Chip scale packaging; Contact resistance; Digital circuits; Electrodes; MOSFETs; Monitoring; Radio frequency; Semiconductor device modeling; Silicides;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320925
