DocumentCode :
1681065
Title :
Sizing Ground Taps to Minimize Substrate Noise Coupling in RF LNAs
Author :
Sundaresan, Arathi ; Fiez, Terri ; Mayaram, Kartikeya
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR
fYear :
2006
Firstpage :
729
Lastpage :
732
Abstract :
The influence of the sizing of ground taps on the noise injected into a 1.5GHz low noise amplifier (LNA), by a stepped buffer, for a heavily doped CMOS process is quantitatively examined. Precise modeling provides good agreement between measurements and simulations. A 10dB increase in isolation was achieved by scaling the area of the substrate contact by a factor of 400, and by increasing the proximity of the contacts to the sensitive transistors
Keywords :
CMOS integrated circuits; low noise amplifiers; microwave amplifiers; 1.5 GHz; RF LNA; heavily doped CMOS process; low noise amplifier; sizing ground taps; stepped buffer; substrate noise coupling; Circuit noise; Circuit simulation; Circuit testing; Noise generators; Noise level; Noise reduction; Packaging; Radio frequency; Semiconductor device noise; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
Type :
conf
DOI :
10.1109/CICC.2006.320926
Filename :
4115057
Link To Document :
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