Title :
Gallium Nitride distributed Bragg Reflector cavity for integrated photonics applications
Author :
Hueting, N.A. ; Engin, E. ; Zain, A. Md ; Sarua, A. ; Heard, P.J. ; Kuball, M. ; Wang, T. ; Cryan, M.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Bristol, Bristol, UK
Abstract :
A deep etched 1D Distributed Bragg Reflector cavity in GaN-AlN-Sapphire has been analytically modeled and simulated using 2D FDTD. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using microphotoluminescence.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; electron beams; finite difference time-domain analysis; focused ion beam technology; gallium compounds; nanophotonics; optical fabrication; photoluminescence; sapphire; sputter etching; wide band gap semiconductors; 2D FDTD; GaN-AlN-Al2O3; deep etched 1D distributed Bragg reflector cavity; gallium nitride distributed Bragg reflector cavity; hybrid electron beam-focused ion beam; integrated photonics applications; microphotoluminescence; structure fabrication; Cavity resonators; Etching; Fabrication; Finite difference methods; Gallium nitride; Photonic crystals; Time domain analysis;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
