• DocumentCode
    1681192
  • Title

    Gallium Nitride distributed Bragg Reflector cavity for integrated photonics applications

  • Author

    Hueting, N.A. ; Engin, E. ; Zain, A. Md ; Sarua, A. ; Heard, P.J. ; Kuball, M. ; Wang, T. ; Cryan, M.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Bristol, Bristol, UK
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A deep etched 1D Distributed Bragg Reflector cavity in GaN-AlN-Sapphire has been analytically modeled and simulated using 2D FDTD. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using microphotoluminescence.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflectors; electron beams; finite difference time-domain analysis; focused ion beam technology; gallium compounds; nanophotonics; optical fabrication; photoluminescence; sapphire; sputter etching; wide band gap semiconductors; 2D FDTD; GaN-AlN-Al2O3; deep etched 1D distributed Bragg reflector cavity; gallium nitride distributed Bragg reflector cavity; hybrid electron beam-focused ion beam; integrated photonics applications; microphotoluminescence; structure fabrication; Cavity resonators; Etching; Fabrication; Finite difference methods; Gallium nitride; Photonic crystals; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1681192