Title :
Compact SiGe HBT EO modulator for analog applications
Author :
Wu, Pengfei ; Deng, Shengling ; Huang, Z. Rena
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This paper proposed a compact linearized SiGe HBT EO modulator for applications in analog signal processing. The length of the modulator is only 15 μm. Simulation shows that it possesses a SFDR of 42 dB.
Keywords :
Ge-Si alloys; electro-optical modulation; heterojunction bipolar transistors; optical information processing; HBT; SFDR; SiGe; analog signal processing; electro-optical modulator; heterojunction bipolar transistors; wavelength 15 mum; Electrooptic modulators; Electrooptical waveguides; Frequency modulation; Heterojunction bipolar transistors; Silicon; Silicon germanium;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
