Title :
Millimetre-wave device modelling differences in microstrip and coplanar waveguide
Author :
Walters, P.C. ; Pollard, R.D. ; Richardson, J.R. ; Gatti, G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
The measurement of an active device produces results which depend on the transmission medium in which the device is embedded. These differences, insofar as a particular device is concerned, are related solely to its extrinsic elements, the intrinsic device being the same in all cases. Results are presented for on-wafer measurement and 2-D simulation of a specially designed active device and its associated transmission structure in both microstrip and coplanar waveguide. The measured and simulated results are obtained for pseudomorphic HEMTs (high electron mobility transistors) with a 0.2- mu m gate length arranged in a 6- mu m*15- mu m configuration with typical extrinsic f/sub t/´s of 70 GHz. The dual approach considered here has the advantage of enabling a model for the intrinsic device to be validated and the extrinsic model elements for both structures to be obtained.<>
Keywords :
high electron mobility transistors; microstrip lines; semiconductor device models; solid-state microwave devices; 0.2 micron; 2D simulation; 70 GHz; active device; coplanar waveguide; extrinsic elements; microstrip; mm-wave devices; model; on-wafer measurement; pseudomorphic HEMTs; transmission medium; Circuit simulation; Circuit topology; Coplanar waveguides; Equivalent circuits; Frequency measurement; Microstrip; Microwave devices; Microwave technology; Parasitic capacitance; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277079
