Characterization of thermal effects on microwave transistor performance using an efficient physical model

Author

Atherton, J.S. ; Snowden, C.M. ; Richardson, J.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Leeds Univ., UK

fYear

1993

Firstpage

1181

Abstract

An efficient physical model capable of predicting the effects of self-heating as well as ambient temperature on the DC and microwave characteristics of MESFETs is outlined. Excellent agreement has been obtained with measured characteristics for a range of gate length devices for both DC and microwave characteristics. The model provides great insight into device behavior and is capable of relating physical structure to device performance while still being efficient enough to run on a personal computer.<>

Keywords

Schottky gate field effect transistors; electronic engineering computing; semiconductor device models; solid-state microwave devices; DC characteristics; MESFETs; ambient temperature; device behavior; gate length devices; microwave characteristics; microwave transistor performance; personal computer; physical model; physical structure; self-heating; thermal effects; Equivalent circuits; Intrusion detection; MESFETs; Microwave devices; Microwave transistors; Permittivity; Predictive models; Temperature distribution; Thermal engineering; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.277081

Filename

277081