Title :
Characterization of thermal effects on microwave transistor performance using an efficient physical model
Author :
Atherton, J.S. ; Snowden, C.M. ; Richardson, J.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
An efficient physical model capable of predicting the effects of self-heating as well as ambient temperature on the DC and microwave characteristics of MESFETs is outlined. Excellent agreement has been obtained with measured characteristics for a range of gate length devices for both DC and microwave characteristics. The model provides great insight into device behavior and is capable of relating physical structure to device performance while still being efficient enough to run on a personal computer.<>
Keywords :
Schottky gate field effect transistors; electronic engineering computing; semiconductor device models; solid-state microwave devices; DC characteristics; MESFETs; ambient temperature; device behavior; gate length devices; microwave characteristics; microwave transistor performance; personal computer; physical model; physical structure; self-heating; thermal effects; Equivalent circuits; Intrusion detection; MESFETs; Microwave devices; Microwave transistors; Permittivity; Predictive models; Temperature distribution; Thermal engineering; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277081
