DocumentCode
1681362
Title
Efficient silicon-on-insulator polarization rotator based on mode evolution
Author
Wirth, Justin C. ; Wang, Jian ; Niu, Ben ; Xuan, Yi ; Fan, Li ; Varghese, Leo T. ; Leaird, Daniel E. ; Qi, Minghao ; Weiner, Andrew M.
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
A compact and high extinction SOI polarization rotator is fabricated and characterized. For TM to TE rotation, a device 37.5 μm in length is demonstrated to have a polarization extinction ratio between 17.8-26 dB from 1525 nm to 1570 nm.
Keywords
integrated optics; light polarisation; optical fabrication; optical rotation; silicon-on-insulator; SOI polarization rotator; Si; TE rotation; TM rotation; polarization extinction ratio; silicon-on-insulator polarization rotator; wavelength 1525 nm to 1570 nm; wavelength 37.5 mum; Extinction ratio; Optical fiber amplifiers; Optical fiber devices; Optical fiber polarization; Photonics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326712
Link To Document