• DocumentCode
    16814
  • Title

    Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

  • Author

    Nanen, Y. ; Kato, Masaaki ; Suda, Jun ; Kimoto, Tatsuya

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
  • Volume
    60
  • Issue
    3
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    1260
  • Lastpage
    1262
  • Abstract
    Effects of nitric oxide (NO) and nitrous oxide (N2O) annealing on 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on the (0001), (0001̅), and (112̅0) faces are investigated. MOSFETs on (112̅0) exhibited high channel mobility (108 cm2/V·s) compared to those on (0001) (29-37 cm2/V·s) and (0001̅) (39-46 cm2/V·s). The MOSFET characteristics are discussed in terms of oxidation taking place during the nitridation annealing and crystal faces.
  • Keywords
    MOSFET; nitridation; oxidation; rapid thermal annealing; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET; SiC; crystal face; high channel mobility; metal-oxide-semiconductor field-effect transistor; nitridation annealing; oxidation; Annealing; Interface states; Logic gates; Nitrogen; Oxidation; Silicon carbide; Crystal orientations; metal–oxide–semiconductor (MOS) field-effect transistor (MOSFET); silicon carbide (SiC);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2236333
  • Filename
    6415265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=16814