DocumentCode :
1681514
Title :
A 1.5-V CMOS Receiver Front-End for 9-Band MB-OFDM UWB System
Author :
Lou, Shuzuo ; Zheng, Hui ; Luong, Howard C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
fYear :
2006
Firstpage :
801
Lastpage :
804
Abstract :
This paper presents the design of a CMOS receiver front-end (RFE) with dual-conversion zero-IF architecture for multi-band OFDM (MB-OFDM) system covering the first 9 frequency bands from 3.1 GHz to 8.0 GHz, each with a bandwidth of 528 MHz. A 3-stage wideband variable-gain LNA and a novel mixer with bottom LO input devices are proposed. A fully integrated frequency synthesizer is included to generate the desired LO signals with a band switching time of less than Ins. Fabricated in TSMC 0.18mum CMOS process and operated at 1.5 V, the RFE measures a maximum noise figure of 8.1 dB and an in-band IIP3 of -11.1 dBm while consuming a total current of 81.5 mA
Keywords :
CMOS integrated circuits; OFDM modulation; low noise amplifiers; mixers (circuits); radio receivers; ultra wideband technology; 1.5 V; 3.1 to 8.0 GHz; 528 MHz; 8.1 dB; 81.5 mA; CMOS receiver; LNA; MB-OFDM UWB system; mixer; multi-band OFDM; receiver front end; Bandwidth; CMOS technology; Circuits; Frequency synthesizers; Noise measurement; OFDM; RF signals; Signal generators; Transceivers; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
Type :
conf
DOI :
10.1109/CICC.2006.321000
Filename :
4115074
Link To Document :
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