Title :
A comparison of MOSFETs, IGBTs, and MCTs for solid state circuit breakers
Author :
Boudreaux, R.R. ; Nelms, R.M.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. Semiconductor advances in power electronics have generated interest in replacing these mechanical circuit breakers with solid-state equivalents. Advantages of solid-state circuit breakers may include faster fault interrupting, fault current limiting, increased repeatability and reliability, no arc to contain or extinguish, and intelligent power control. This paper provides a comparison of three power electronic device families and their suitability to operate in solid-state circuit breaker applications up to 600 volts and 50 amperes
Keywords :
MOS-controlled thyristors; bipolar transistor switches; circuit breakers; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power field effect transistors; power semiconductor switches; thyristors; 50 A; 600 V; IGBT; MCT; MOSFET; applications; excessive current interruption; fault current limiting; fault interruption; intelligent power control; reliability; repeatability; solid-state circuit breakers; suitability; Circuit breakers; Circuit faults; Fault currents; Insulated gate bipolar transistors; Intelligent control; MOSFETs; Power control; Power electronics; Power generation; Solid state circuits;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-3044-7
DOI :
10.1109/APEC.1996.500447