Analysis of wave propagation effects on microwave field-effect transistors

Author

Hakim, M.S. ; El-Ghazaly, S.M.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

1993

Firstpage

1303

Abstract

The effects of electromagnetic wave propagation on FET electrodes are investigated by analyzing two devices: the conventional MESFET and the INGFET (inverted-gate FET) which is designed to exploit the wave propagation effects. The wave effects are analyzed using a CAD (computer-aided design) model which accounts for the semiconductor characteristics and the nonstationary electron dynamics, the electromagnetic characteristics, and the parasitic elements of the device. The importance of including the wave propagation effects in the device analysis is clearly shown in the results. It is shown that the amplification factor of the gainful mode of the INGFET is larger than that of the MESFET for higher frequencies and wider devices. Also, the INGFET exhibits higher gain when operated in the TWT mode and when terminated with 50- Omega loads.<>

Keywords

Schottky gate field effect transistors; electronic engineering computing; field effect transistors; semiconductor device models; solid-state microwave devices; CAD model; FET electrodes; INGFET; MESFET; TWT mode; computer-aided design; electromagnetic characteristics; inverted-gate FET; microwave field-effect transistors; nonstationary electron dynamics; parasitic elements; semiconductor characteristics; wave propagation effects; Design automation; Electrodes; Electromagnetic analysis; Electromagnetic modeling; Electromagnetic propagation; Electrons; MESFETs; Microwave FETs; Microwave devices; Microwave propagation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.277114

Filename

277114