Title :
Analysis of wave propagation effects on microwave field-effect transistors
Author :
Hakim, M.S. ; El-Ghazaly, S.M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
The effects of electromagnetic wave propagation on FET electrodes are investigated by analyzing two devices: the conventional MESFET and the INGFET (inverted-gate FET) which is designed to exploit the wave propagation effects. The wave effects are analyzed using a CAD (computer-aided design) model which accounts for the semiconductor characteristics and the nonstationary electron dynamics, the electromagnetic characteristics, and the parasitic elements of the device. The importance of including the wave propagation effects in the device analysis is clearly shown in the results. It is shown that the amplification factor of the gainful mode of the INGFET is larger than that of the MESFET for higher frequencies and wider devices. Also, the INGFET exhibits higher gain when operated in the TWT mode and when terminated with 50- Omega loads.<>
Keywords :
Schottky gate field effect transistors; electronic engineering computing; field effect transistors; semiconductor device models; solid-state microwave devices; CAD model; FET electrodes; INGFET; MESFET; TWT mode; computer-aided design; electromagnetic characteristics; inverted-gate FET; microwave field-effect transistors; nonstationary electron dynamics; parasitic elements; semiconductor characteristics; wave propagation effects; Design automation; Electrodes; Electromagnetic analysis; Electromagnetic modeling; Electromagnetic propagation; Electrons; MESFETs; Microwave FETs; Microwave devices; Microwave propagation;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277114
