Title :
Electrothermal bond graph model for semiconductor switching devices
Author :
Garcia, Janette ; Dauphin-Tanguy, Genevieve ; Rombaut, Christian
Author_Institution :
LAIL, URA CNRS, Ecole Centrale de Lille, Villeneuve d´´Ascq, France
Abstract :
A methodology for modeling and simulating the electrothermal behavior of power semiconductor switching devices is illustrated and validated. The electrothermal model is constructed using the bond graph formalism. This bond graph model is centered around the idea of having a single model regardless of the switch state. The electrothermal model describes the dynamic temperature distribution of the device from the chip surface through the package and heat sink, and the influence of the chip temperature variation on the electrical characteristics of the device
Keywords :
bond graphs; graph theory; heat sinks; power semiconductor switches; semiconductor device models; semiconductor device packaging; temperature distribution; thermal analysis; bond graph formalism; chip surface; chip temperature variation; dynamic temperature distribution; electrical characteristics; electrothermal bond graph model; heat sink; modeling; power semiconductor switching devices; simulation; Bonding; Circuit simulation; Electrothermal effects; Equations; Power electronics; Power semiconductor switches; Power system modeling; Switching converters; Temperature dependence; Temperature distribution;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-3044-7
DOI :
10.1109/APEC.1996.500452
