DocumentCode
1681938
Title
10 MHz PWM converters with GaAs VFETs
Author
Kollman, Robert ; Collins, Greg ; Plumton, Don
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
1
fYear
1996
Firstpage
264
Abstract
Switching speeds of currently available power switches have limited pulsewidth modulation (PWM) techniques to 1 to 2 MHz. High-speed (<2 ns switching) GaAs vertical field-effect transistors (VFETs) have overcome the limitation. These devices have been incorporated in 10 MHz, PWM, boost and buck 5 W power stages that have demonstrated good efficiencies (>85%) and very high power densities (500 W/in.3 )
Keywords
DC-DC power convertors; III-V semiconductors; PWM power convertors; field effect transistor switches; gallium arsenide; power field effect transistors; power semiconductor switches; semiconductor materials; 10 MHz; 5 W; GaAs; GaAs VFET; PWM converters; boost power stage; buck power stage; power switches; switching speeds; vertical field-effect transistors; very high power densities; Capacitors; Frequency; Gallium arsenide; Inductors; MOSFETs; Power supplies; Pulse width modulation; Pulse width modulation converters; Rectifiers; Semiconductor device packaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location
San Jose, CA
Print_ISBN
0-7803-3044-7
Type
conf
DOI
10.1109/APEC.1996.500453
Filename
500453
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