DocumentCode :
1681966
Title :
Ultra-high performance rugged scaled power MOSFETs for high-frequency power conversion
Author :
Fischer, Kevin ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume :
1
fYear :
1996
Firstpage :
270
Abstract :
The ruggedness and performance of ultra-high density low-voltage power MOSFETs are reported. It is shown that rugged power MOSFETs with ultra-high static and switching performance can be developed using scaled silicon technologies. The experimental results are supported with extensive numerical simulations which clearly show important physical effects as the technology is scaled
Keywords :
elemental semiconductors; power MOSFET; power conversion; power semiconductor switches; semiconductor materials; silicon; high-frequency power conversion; low-voltage power MOSFET; nonisothermal simulation; rugged scaled power MOSFET; silicon; ultra-high density; ultra-high static performance; ultra-high switching performance; unclamped inductive switching; Bipolar transistors; Circuit testing; Contact resistance; Inductors; MOSFETs; Numerical simulation; Power conversion; Silicon; Surface resistance; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-3044-7
Type :
conf
DOI :
10.1109/APEC.1996.500454
Filename :
500454
Link To Document :
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