Title :
A new probe for W-band on-wafer measurements
Author :
Liu, S.M.J. ; Boll, G.G.
Author_Institution :
GE Aerosp., Syracuse, NY, USA
Abstract :
A W-band wafer probe based on a coaxial line design has been developed. With built-in bias tee, 2-dB insertion loss and better than 12-dB return loss from 75 GHz to 110 GHz are achieved. A probe without bias tee has 1.3-dB loss and 1.5-dB return loss at 94 GHz when optimized for narrowband application. S-parameters of discrete transistors and circuits have been accurately measured from 75 GHz to 110 GHz. The noise figure of active circuits has also been measured at W-band with these probes.<>
Keywords :
MMIC; S-parameters; electric noise measurement; integrated circuit testing; microwave measurement; probes; semiconductor device noise; semiconductor device testing; solid-state microwave devices; test equipment; waveguide components; 1.3 to 2 dB; 12 dB; 75 to 110 GHz; EHF; MMIC testing; S-parameters; W-band; built-in bias tee; coaxial line design; narrowband application; on-wafer measurements; wafer probe; Active circuits; Aerospace industry; Circuit testing; Coaxial components; Conductors; Frequency; Noise figure; Noise measurement; Probes; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277123
