Title :
A GaN MOSFET supply modulator compatible with feed forward loop for wideband envelope tracking power amplifier
Author :
Zhancang Wang ; Li Wang ; Rui Ma ; Lanfranco, Sandro
Author_Institution :
CTO Res., Nokia Siemens Networks, Beijing, China
Abstract :
In this paper, a novel supply modulator for envelope tracking power amplifier was presented, which boosts operation bandwidth capability to tracking up to LTE 60MHz by utilizing GaN MOSFET and compatible with feed forward loop to linearize the modulator for wideband, realizing high efficiency trading off linearity as well.
Keywords :
III-V semiconductors; Long Term Evolution; MOSFET; feedforward; gallium compounds; modulators; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; LTE; MOSFET supply modulator; feedforward loop; frequency 60 MHz; operation bandwidth capability; wideband envelope tracking power amplifier; wideband modulator; Feeds; Gallium nitride; MOSFET; Modulation; Nonlinear distortion; Power amplifiers; Switches; Compound semiconductor; GaN MOSFET; energy efficiency; power amplifiers; power supplies;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2929-3
Electronic_ISBN :
2164-2958
DOI :
10.1109/RWS.2013.6486646
