Title :
Ka-band power PHEMT on-wafer characterization using prematched structures
Author :
Sharma, A.K. ; Dow, G.S. ; Aust, M. ; Canyon, J. ; Allen, B. ; Pak, S. ; Yang, D. ; Hwang, Y. ; Tan, K.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
High-power Ka-band power amplifiers have been developed using monolithic prematched structures utilizing power InGaAs pseudomorphic high-electron-mobility-transistor (PHEMT) devices. On-wafer load-pull impedance data on structures containing 0.15- mu m*400- mu m, 0.15- mu m*800- mu m, and 0.15- mu m*1600- mu m devices were obtained. Based on this information, a two-stage MIC (microwave integrated circuit) amplifier consisting of a single 1600- mu m monolithic prematched structure driving four 1600- mu m monolithic prematched structures was realized. The amplifier achieved an output power of 1.6 W (32.2 dBm) with 8.1 dB gain at 35 GHz.<>
Keywords :
MMIC; high electron mobility transistors; integrated circuit testing; microwave amplifiers; microwave integrated circuits; microwave measurement; power amplifiers; power transistors; semiconductor device testing; solid-state microwave devices; 0.15 micron; 1.6 W; 35 GHz; 400 to 1600 micron; 8.1 dB; InGaAs; Ka-band; MMIC; high-electron-mobility-transistor; load-pull impedance data; microwave integrated circuit; monolithic prematched structures; on-wafer characterization; power PHEMT; power amplifiers; pseudomorphic HEMT; two-stage MIC; High power amplifiers; Impedance; Indium gallium arsenide; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277125
