Microwave large-signal amplifier design using a quasi-black-box transistor model

A method for the design of large-signal microwave amplifiers using a quasi-black-box transistor model is described. It is based on design maps, drawn on the basis of a suitable large-signal mathematical model of the transistor, which permit a straightforward search for the load reflection coefficient which provides maximum saturated output power or, alternatively, a good compromise between conflicting gain and output power requirements. This method, besides being accurate enough for most amplifier design problems, is also quite simple to apply in practice, since the numerical computations involved can easily be programmed on a desk-top personal computer. The design procedures were implemented in a Fortran program running on an IBM AT personal computer, requiring 350 kByte RAM and a very short (a few minutes) total computing time. The good agreement between predicted and measured performance confirms the validity of the method