Title :
Gate driver supply of power switches without galvanic insulation
Author :
Mitova, R. ; Crébier, J-Ch ; Aubard, L. ; Scheaffer, Ch.
Author_Institution :
LEG-ENSIEG INPG-CNRS, France
Abstract :
In this paper we present a topology for MOSFET or IGBT gate driver supply eliminating the galvanic insulation. This is a parallel circuit around the main switch. The structure contains two MOSFET components. This topology can be entirely integrated throughout a classical double diffused MOSFET technological process. The topology is implemented in a buck converter and simulated with Pspice in order to validate the operating principle. It is demonstrated that thanks to parasitics, a pulse linear regulation procedure is operating. The integrated gate driver supply takes advantage of switching events to save and store commutation energy. The topology operates as a snubber. Results of experimental set are provided and an integration procedure is also discussed.
Keywords :
SPICE; commutation; driver circuits; field effect transistor switches; insulated gate bipolar transistors; monolithic integrated circuits; power engineering computing; power semiconductor switches; snubbers; switching convertors; IGBT; MOSFET devices; Pspice; buck converter; commutation energy; insulated gate bipolar transistor; integrated gate driver supply; metal-oxide-semiconductor FET; monolithic integration; power switches; pulse linear regulation; snubber; Circuit topology; Driver circuits; Galvanizing; Insulated gate bipolar transistors; Insulation; Integrated circuit technology; MOSFET circuits; Power supplies; Switches; Switching circuits;
Conference_Titel :
Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE
Print_ISBN :
0-7803-8486-5
DOI :
10.1109/IAS.2004.1348731
