DocumentCode :
1682529
Title :
Lasing in Thue-Morse structure with optimal aperiodicity
Author :
Yang, Jin-Kyu ; Noh, Heeso ; Boriskina, Svetlana V. ; Rooks, Michael J. ; Solomon, Glenn S. ; Negro, Luca Dal ; Cao, Hui
Author_Institution :
Dept. of Appl. Phys., Yale Univ., New Haven, CT, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrated lasing in two-dimensional Thue-Morse structures fabricated in InAs quantum dots embedded GaAs membrane. We optimized structural aperiodicity by gradually changing the relative size of two scatters for the strongest light confinement.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; GaAs membrane; InAs-GaAs; Thue-Morse structure; lasing; light confinement; optimal aperiodicity; scatters; Educational institutions; Gallium arsenide; Lattices; Q factor; Quantum dot lasers; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326756
Link To Document :
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