Characterization, parameter identification and modeling of a new monolithic emitter- switching bipolar transistor

This paper proposes the characterization, parameter estimation, and modeling of a monolithic cascade, which has been called emitter-switching bipolar transistor (ESBT), suitable for high-voltage applications. Such an innovative device composes of a high-voltage power BJT and low-voltage power MOSFET that are connected in cascade connection, with the MOSFET drain embedded inside the BJT emitter. Being a four-terminal device, the ESBT requires a suitable characterization procedure aimed to identify the main electrical parameters relative to the inner BJT and MOSFET parts. Various test configurations that are needed to characterize the ESBT are presented and discussed. The device has been characterized to derive a behavioral model implemented in the PSpice simulator in order to predict the device performances.