Title :
DC-stabilized amplifier as a building block for GaAs MMICs
Author :
Kemppinen, Esa ; Jarvinen, Esko
Author_Institution :
Tech. Res. Centre of Finland/Telecom, Espoo, Finland
Abstract :
The DC, AC, and noise properties as well as the applications of a variable-gain common-source MESFET amplifier circuit using an active load transistor are discussed. The structure can be used as a versatile building block in analog GaAs integrated circuits. Two applications of the basic circuit are presented. The first is a wideband low-noise amplifier with low power consumption; the second is a phase splitter consisting of two basic amplifier structures in differential configuration. It is concluded that amplifiers using enhancement-type MESFETs result in a better noise figure and lower power consumption than those with depletion-type devices
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; electron device noise; gallium arsenide; microwave amplifiers; phase shifters; wideband amplifiers; AC properties; DC properties; DC stabilised amplifier; GaAs integrated circuits; III-V semiconductors; MESFET; active load transistor; analog IC; depletion-type devices; differential configuration; enhancement type devices; low power consumption; noise figure; noise properties; phase splitter; variable gain common source amplifier; wideband low-noise amplifier; Active noise reduction; Analog integrated circuits; Broadband amplifiers; Differential amplifiers; Energy consumption; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MESFET circuits; MMICs;
Conference_Titel :
Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean
Conference_Location :
Lisbon
DOI :
10.1109/MELCON.1989.50048
