A novel CuInS2/polyaniline base heterojunction solar cell

Copper indium disulfide (CuInS₂) has direct band-gap energy of about 1.5 eV and a large absorption coefficient, which are well suited to the photovoltaic conversion of solar energy. In this task a novel florin doped tin oxide (FTO)/CuInS₂/polyaniline base/ZnO/FTO heterojunction solar cell was fabricated. CuInS₂ thin films were electrodeposited onto fluorine doped tin oxide substrate by the electrodeposition technique. Current-voltage characteristic curves were measured under darkness and illumination. It found that Jsc, Voc, and η are 3.2×10^-6 A/cm², 0.714 V and 1.92×10^-3 % for FTO/CuInS₂/ZnO/ITO heterojunction solar cell while Jsc, Voc, and η are 3.25×10^-6 A/cm², 0.724 V and 1.8×10^-3 % for FTO/CuInS₂/polyaniline base ZnO/ITO heterojunction solar cell.