Title :
A novel CuInS2/polyaniline base heterojunction solar cell
Author :
Ebrahim, Sh.M. ; Morsi, I. ; Soliman, M.M. ; Alshrkawy, M. ; Elzaem, A.A.
Author_Institution :
Dept. of Mater. Sci., Alexandria Univ., Alexandria, Egypt
Abstract :
Copper indium disulfide (CuInS2) has direct band-gap energy of about 1.5 eV and a large absorption coefficient, which are well suited to the photovoltaic conversion of solar energy. In this task a novel florin doped tin oxide (FTO)/CuInS2/polyaniline base/ZnO/FTO heterojunction solar cell was fabricated. CuInS2 thin films were electrodeposited onto fluorine doped tin oxide substrate by the electrodeposition technique. Current-voltage characteristic curves were measured under darkness and illumination. It found that Jsc, Voc, and η are 3.2×10-6 A/cm2, 0.714 V and 1.92×10-3 % for FTO/CuInS2/ZnO/ITO heterojunction solar cell while Jsc, Voc, and η are 3.25×10-6 A/cm2, 0.724 V and 1.8×10-3 % for FTO/CuInS2/polyaniline base ZnO/ITO heterojunction solar cell.
Keywords :
absorption; copper compounds; electrodeposition; solar cells; thin films; CuInS2; absorption coefficient; copper indium disulfide; current-voltage characteristic curves; electrodeposition technique; illumination; polyaniline base heterojunction solar cell; thin films; Indium tin oxide; Lighting; Materials; Photovoltaic cells; Photovoltaic systems; Zinc oxide;
Conference_Titel :
Control Automation and Systems (ICCAS), 2010 International Conference on
Conference_Location :
Gyeonggi-do
Print_ISBN :
978-1-4244-7453-0
