Title :
Reducing IGBT losses in ZCS series resonant converters
Author :
Ivensky, Gregory ; Zeltser, Ilya ; Katz, Al ; Ben-Yaakov, Sam
Author_Institution :
Dept. of Electr. & Comput. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
Abstract :
The fundamental operational parameter that controls the losses in series resonant power converters was found to be the (reflected) voltage transfer ratio. Losses, which are a function of the average current (such as conduction losses of IGBTs and diodes), are independent of the switching frequency. Losses which are associated with the RMS are a function of both the (reflected) DC current voltage ratio and the switching frequency ratio. Universal and normalized graphs, derived in this study, can be conveniently used to assess expected RMS and average current conduction losses under any given operational conditions. The residual switching losses in “ZCS” series resonant power converters operating in the continuous current mode can be reduced by simple current snubbers placed in the commutation circuits. The experimental results confirm the theoretical predictions that the turn-on snubbers can reduce switching losses by about 1.5% at a switching frequency of 65 kHz
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor switches; resonant power convertors; snubbers; switching circuits; 65 kHz; DC current voltage ratio; IGBT losses; ZCS; average current; commutation circuits; conduction losses; continuous current; current snubbers; reflected voltage transfer ratio; residual switching losses; series resonant power converters; switching frequency; turn-on snubbers; zero current switching; Diodes; Insulated gate bipolar transistors; RLC circuits; Resonance; Snubbers; Switching converters; Switching frequency; Switching loss; Voltage control; Zero current switching;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-3044-7
DOI :
10.1109/APEC.1996.500484